AbstractQuantum confinement in superlattices affects shallow levels and band edges considerably (length scale of order 100 Å), but not deep levels (length scale of order 5 Å). Thus by band-gap engineering, one can move a band edge through a deep level, causing the defect responsible for the level to change its doping character. For example, the cation-on-anion-site defect in AlxGa1−xSb alloys is predicted to change from a shallow acceptor to a deep acceptor-like trap as the valence band edge passes through its T2 deep level with increasing At alloy content x. In a, Type-II superlattice, such as InAs/AlxGa1−xSb for x>0.2, where the conduction band minimum of the InAs should lie energetically below the antisite defect's T2 level in bulk AlxGa1−xSb, the electrons normally trapped in this deep level (when the defect is neutral) remotely dope the InAs n-type in the superlattice, leaving the defect positively charged. Thus a native defect that is thought of as an acceptor can actually be a donor and control the n-type doping of InAs quantum wells. The physics of such deep levels in superlattices and in quantum wells is summarized, and related to high-speed devices.