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MRS Proceedings
Article . 1992 . Peer-reviewed
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Passivation of Surface and Bulk Defects in InP

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1992 English Publisher:Springer Science and Business Media LLCJournal:MRS Proceedings, volume 262 (issn: 0272-9172, eissn: 1946-4274, Copyright policy )
Authors: Sathya Balasubramanian; Vikram Kumar; N. Balasubramanian; V. Premachandran;

doi: 10.1557/proc-262-413

Passivation of Surface and Bulk Defects in InP

Abstract

ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level in the top half of the band gap. The H+ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
1
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