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Conference object . 2016
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MRS Proceedings
Article . 1991 . Peer-reviewed
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https://dx.doi.org/10.1557/pro...
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Scanning Tunneling Microscopy of Nanoindentations

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Jan 1991 United Kingdom English Publisher:Springer Science and Business Media LLCJournal:MRS Proceedings, volume 239 (issn: 0272-9172, eissn: 1946-4274, Copyright policy )
Authors: Castell, M; Weihs, T;

doi: 10.1557/proc-239-367

Scanning Tunneling Microscopy of Nanoindentations

Abstract

ABSTRACTA scanning tunneling microscopy (STM) study of low load indentations into Si, GaAs and Au is presented. Compared with standard micrographs obtained through optical microscopy and scanning electron microscopy, the STM images show greatly improved resolution in and around the indentation. The effects of relaxation and pile-up may be observed through contour plots which show inward bowing of the indentation faces in Si.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
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