Degradation of Junction Parameters of an ElectricallyStressed NPN Bipolar Transistor

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2001 English Publisher:WileyJournal:Active and Passive Electronic Components, volume 24, pages 155-163 (issn: 0882-7516, eissn: 1563-5031,

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Authors: N. Toufik; F. Pélanchon; P. Mialhe;

doi: 10.1155/2001/53209

Degradation of Junction Parameters of an ElectricallyStressed NPN Bipolar Transistor

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Abstract

The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter‐base junction parameters are degraded during the electrical stress experiments. Both the amplitude and the rate of this degradation depend on the stress duration. The evaluation of these parameters allows to discuss hot carrier degradation process, to estimate the stress magnitude and to control the device.

Related Organizations

University of Perpignan
France

Keywords

Electrical engineering. Electronics. Nuclear engineering, TK1-9971

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