A Low‐Voltage Floating‐Gate MOS Biquad

descriptionPublicationkeyboard_double_arrow_right Article 03 Aug 2000 Spain English Publisher:WileyJournal:VLSI Design, volume 12, pages 407-414 (issn: 1065-514X, eissn: 1563-5171,

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Authors: Esther Rodríguez-Villegas; Alberto Yufera; Adoración Rueda;

doi: 10.1155/2001/16935

handle: 11441/63679 , 10261/85152

A Low‐Voltage Floating‐Gate MOS Biquad

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Abstract

A second‐order gm‐C filter based on the Floating‐Gate MOS (FGMOS) technique is presented. It uses a new fully differential transconductor and works at 2 V of voltage supply with a full differential input linear range and a THD below 1%. Programming and tuning are performed by means of a single voltage signal. The transconductor incorporates a novel Common‐Mode Feedback Circuit (CMFB) based also on FGMOS transistors.

Country

Spain

Related Organizations

University of Seville
Spain
Spanish National Research Council
Spain
Seville Institute of Microelectronics
Spain
Centro Nacional de Microelectrónica
Spain

Keywords

FGMOS circuits, Analog low-voltage low-power filters

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