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Active and Passive Electronic Components
Article . 1998 . Peer-reviewed
License: CC BY
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Active and Passive Electronic Components
Article
License: CC BY
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Active and Passive Electronic Components
Article . 1998
Data sources: DOAJ
https://dx.doi.org/10.1155/199...
Article
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Four Level Simulation of MOSFET

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1998 English Publisher:WileyJournal:Active and Passive Electronic Components, volume 21, pages 231-257 (issn: 0882-7516, eissn: 1563-5031, Copyright policy )
Authors: M. N. Doja; Moinuddin; Umesh Kumar;

doi: 10.1155/1998/38280

Four Level Simulation of MOSFET

Abstract

In this paper a software (MOSOFT) has been developed for 4‐level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.

Keywords

channel effect, MOSOFT, Electrical engineering. Electronics. Nuclear engineering, VGB., TK1-9971

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
1
Average
Average
Average
gold