A ZnTaOx Based Resistive Switching Random Access Memory

descriptionPublicationkeyboard_double_arrow_right Article 16 May 2014 Singapore English Publisher:The Electrochemical SocietyJournal:ECS Solid State Letters, volume 3, pages Q36-Q39 (issn: 2162-8742, eissn: 2162-8750,

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Authors: Zheng, K.; Zhao, J. L.; Leck, K. S.; Teo, K. L.; Yeo, E. G.; Sun, X. W.;

doi: 10.1149/2.0101407ssl

A ZnTaOx Based Resistive Switching Random Access Memory

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Abstract

The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version

Country

Singapore

Related Organizations

National University of Singapore
Singapore
Agency for Science, Technology and Research
Singapore
Data Storage Institute
Singapore
Nanyang Technological University
Singapore
South University
United States

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Keywords

:Engineering::Electrical and electronic engineering::Electronic apparatus and materials [DRNTU]

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