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Journal of The Electrochemical Society

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Photoetching Mechanisms of GaN in Alkaline S[sub 2]O[sub 8][sup 2−] Solution

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2009 English Publisher:The Electrochemical SocietyJournal:Journal of The Electrochemical Society, volume 156, page D371 (issn: 0013-4651,

Authors: M. R. Kooijman; D. H. van Dorp; Jan L. Weyher; Jan L. Weyher; John J. Kelly;

doi: 10.1149/1.3183807

Photoetching Mechanisms of GaN in Alkaline S[sub 2]O[sub 8][sup 2−] Solution

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Abstract

2� solution was used to explain the mechanism of photoetching of the semiconductor under open-circuit conditions. The observed enhancement of the photoetch rate as a result of platinum either directly on or in electrical contact with the semiconductor is shown to be mainly a photogalvanic effect. The factors determining the etching kinetics and surface morphology are elucidated.

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