In this work, we describe the synthesis of porous Au structures by galvanic displacement reaction using porous Si exhibiting arrays of parallel pores with diameters near 100 nm as template material. Two metal ions were used as Au precursors: tetrachloroaurate(III) and bis(ethylenediamine)Au(III). Fluoride was employed to etch the Si oxides that form as a result of the displacement reaction. The porous metal layer that forms with tetrachloroaurate(III) is an agglomerate of spherical particles with ca. 100 nm diameter. Metallization with bis(ethylenediamine)Au(III) preserves the morphology of the original porous Si layer, creating a porous Au layer containing an array of parallel pores with ca. 100 nm diameter. The displacement process is under diffusion control for both reagents. The expansion rate of the porous metal layer into the substrate agrees well with a simple one-dimensional reaction-diffusion model entailing the displacement of Si in a large extent. The electrochemical behavior of the synthesized porous Au layers was studied by voltammetry.