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Photoelectrochemistry and Etching of SiC: a Comparison with Si

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 27 Apr 2007Publisher:The Electrochemical SocietyJournal:ECS Transactions, volume 6, pages 513-524 (issn: 1938-5862, eissn: 1938-6737, Copyright policy )
Authors: Kelly, J.J.; van Dorp, D.H.; Weyher, J.L.;

doi: 10.1149/1.2731220

handle: 2066/71911

Photoelectrochemistry and Etching of SiC: a Comparison with Si

Abstract

The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting applications of this work for SiC device technology.

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Applied Materials Science

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
1
Average
Average
Average
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bronze
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