
A superior nonflammable selective TaC etchant has been developed. This etchant possesses a TaC etch rate of 13 Aå/minute as well as TaC to HfO2 etch selectivity of 140:1. The TaC to SiO2 etch selectivity is high enough to allow the use of this etchant with a SiO2 hard mask.
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