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doi: 10.1149/1.2120076
Croissance epitaxique de couches monocristallines de Si sur les faces (100), (110) et (111) de monocristaux de zircone stabilises par l'oxyde d'yttrium. Croissance des couches de Si par pyrolyse de SiH 4 entre 950-1075°C a des vitesses de 0,08-1,2 μm/min. Caracterisation des couches par microscopies optique et electronique a balayage, diffraction RX et d'electrons en reflexion, retrodiffusion Rutherford, conductivite electrique et mesures d'effet Hall
citations This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 29 | |
popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Average | |
influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Top 1% | |
impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Top 10% |