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Silicon Etching in HNO[sub 3]/HF Solution: Charge Balance for the Oxidation Reaction

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1999 Netherlands Publisher:The Electrochemical SocietyJournal:Electrochemical and Solid-State Letters, volume 2, page 178 (issn: 1099-0062,

Authors: K. Butter; Ernst S. Kooij; John J. Kelly;

doi: 10.1149/1.1390775

Silicon Etching in HNO[sub 3]/HF Solution: Charge Balance for the Oxidation Reaction

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Abstract

The potential dependence of the current and the etch rate of p- and n-type silicon electrodes in 6 M HNO3–6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced.

Country

Netherlands

Related Organizations

Utrecht University
Netherlands
University of Twente
Netherlands

Keywords

IR-75183

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	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
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