
doi: 10.1142/5173
* Growth of III-Nitride Semiconductors and Their Characterization (H Morkoc et al.) * GaN and AlGaN High Voltage Power Rectifiers (A-P Zhang et al.) * GaN-Based Power High Electron Mobility Transistors (S Karmalkar et al.) * Fabrication and Performance of GaN MOSFETs and MOSHFETs (C R Abernathy & B P Gila) * SiC Materials Growth and Characterization (M Skowronski) * High Voltage SiC Power Rectifiers (T P Chow) * Silicon Carbide MOSFETs (J A Cooper, Jr.) * InGaAsN-Based HBTs (A G Baca & P C Chang) * Ultraviolet Photodetectors Based Upon III-N Materials (R D Dupuis & J C Campbell) * Dilute Magnetic GaN, SiC and Related Semiconductors (J Kim et al.)
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 74 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Top 10% | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Top 10% | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Top 10% |
