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Wide Energy Bandgap Electronic Devices

Authors: Fan Ren; John C Zolper;

Wide Energy Bandgap Electronic Devices

Abstract

* Growth of III-Nitride Semiconductors and Their Characterization (H Morkoc et al.) * GaN and AlGaN High Voltage Power Rectifiers (A-P Zhang et al.) * GaN-Based Power High Electron Mobility Transistors (S Karmalkar et al.) * Fabrication and Performance of GaN MOSFETs and MOSHFETs (C R Abernathy & B P Gila) * SiC Materials Growth and Characterization (M Skowronski) * High Voltage SiC Power Rectifiers (T P Chow) * Silicon Carbide MOSFETs (J A Cooper, Jr.) * InGaAsN-Based HBTs (A G Baca & P C Chang) * Ultraviolet Photodetectors Based Upon III-N Materials (R D Dupuis & J C Campbell) * Dilute Magnetic GaN, SiC and Related Semiconductors (J Kim et al.)

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
74
Top 10%
Top 10%
Top 10%
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