Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

B Pelliciari; J P. Chamonal; G L. Destefanis; L Dicioccio

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https://doi.org/10.1117/12.943...

Article . 1988 . Peer-reviewed

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https://dx.doi.org/10.1117/12....

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Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 03 May 1988Publisher:SPIEJournal:SPIE Proceedings, volume 865, page 22 (issn: 0277-786X,

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Authors: B Pelliciari; J P. Chamonal; G L. Destefanis; L Dicioccio;

doi: 10.1117/12.943540

Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

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Abstract

The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

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