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Multiple scattered electron-beam effect in electron-beam lithography

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Aug 1991Publisher:SPIEJournal:SPIE Proceedings, volume 1,465, page 185 (issn: 0277-786X, Copyright policy )
Authors: Norio Saitou; Teruo Iwasaki; Fumio Murai;

doi: 10.1117/12.47355

Multiple scattered electron-beam effect in electron-beam lithography

Abstract

The multiple electron beam scattering effect is studied experimentally in an electron optical column. This effect causes a serious problem on the critical dimension of LSI pattern when the whole area of a wafer is exposed to an electron beam. This paper discusses the quantitative analysis and a method of reducing this effect.

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Powered by OpenAIRE graph
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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
9
Average
Top 10%
Average
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