
doi: 10.1117/12.473442
In this paper, we describe the optimization strategy for Eth (Dose to clear) method of DUV resist process control for 0.25um technology. Both experimental and simulation results will be presented to show the optical and developing behaviors of DUV resist in extreme low energy exposure condition. Based on these data we proposed an optimized method of Eth measurement. With this method, false alarm of DUV resist photo-speed and exposure out of control will be eliminated, cost of manpower for OOC troubleshooting will be saved.
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