We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared. Such microfabrication has enabled us to reproducibly define photonic crystals with lattice parameters ranging from 650 to 730 nm. In GaAs semiconductor wafers, these can serve as high-reflectivity (>95%) mirrors. Here, we show the procedure used to generate these photonic crystals and describe the geometry dependence of their spectral response.