Photoemission of microrelief semiconductor surfaces with semitransparent Au films

N. L. Dmitruk; V. G. Litovchenko; S. V. Mamikin

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Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Article . 1995 . Peer-reviewed

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https://dx.doi.org/10.1116/1.5...

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Photoemission of microrelief semiconductor surfaces with semitransparent Au films

descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 1995 English Publisher:American Vacuum SocietyJournal:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, volume 13, pages 445-447 (issn: 1071-1023, eissn: 1520-8567,

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Authors: N. L. Dmitruk; V. G. Litovchenko; S. V. Mamikin;

doi: 10.1116/1.587967

Photoemission of microrelief semiconductor surfaces with semitransparent Au films

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Abstract

In this article the dependence of the photoemission current of microrelief interfaces of Au–GaAs on temperature, intensity of light and bias, and its connection with electrophysical parameters of the structure is analyzed. A detailed analysis of the characteristics of the anomalous photoemission current and the theory of this effect have been carried out.

Related Organizations

Ukrainian Academy of Agrarian Sciences
Ukraine

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