Reactive ion etching for submicron structures

descriptionPublicationkeyboard_double_arrow_right Article 01 Nov 1981 English Publisher:American Vacuum SocietyJournal:Journal of Vacuum Science and Technology, volume 19, pages 1,418-1,422 (issn: 0022-5355,

Authors: Ilesanmi Adesida; R. Tiberio; J. D. Chinn; E. D. Wolf;

doi: 10.1116/1.571222

Reactive ion etching for submicron structures

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Abstract

The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions. This study showed that PMMA can be used as a masking resist for etching silicon dioxide using fluorine-deficient etch gases. Linewidths with dimensions of 0.1 μm have been obtained in silicon dioxide with usable selectivity between PMMA and silicon dioxide.

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Cornell University
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