Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector

descriptionPublicationkeyboard_double_arrow_right Article 01 May 2002 Canada English Publisher:American Vacuum SocietyJournal:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, volume 20, pages 1,079-1,081 (issn: 0734-2101, eissn: 1520-8559,

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Authors: DeVries, A. M.; Tarr, N. G.; Cheben, Pavel; Grant, Peter; Janz, Siegfried; Xu, Dan-Xia;

doi: 10.1116/1.1475981

Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector

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Abstract

Metal–semiconductor–metal photodetectors with electrode spacing of 0.5 μm have been fabricated on polysilicon films formed by low-pressure chemical vapor deposition. The detectors give a responsivity of 8 mA/W at 980 nm, and a 3-dB bandwidth of 1.5 GHz. Steady-state and transient photoresponse both appear to be limited by recombination and trapping at energy levels within the forbidden gap.

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Canada

Related Organizations

National Research Council Canada
Canada
Institute for Microstructural Sciences
Canada
Carleton University
Canada

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