SummaryAn improved setup for accurate near‐field surface potential measurements and characterisation of biased electronic devices using the Kelvin Probe method has been developed. Using an external voltage source synchronised with the raster‐scan of the KPFM‐AM, this setup allows to avoid potential measurement errors of the conventional Kelvin Probe Force Microscopy in the case ofin situmeasurements on biased electronic devices. This improved KPFM‐AM setup has been tested on silicon‐based devices and organic semiconductor‐based devices such as organic field effect transistors (OFETs), showing differences up to 25% compared to the standard KPFM‐AM lift‐mode measurement method.