Defects in GaSe grown by Bridgman method
Copyright policy ) K A, Kokh; V V, Atuchin; T A, Gavrilova; A, Kozhukhov; E A, Maximovskiy; L D, Pokrovsky; A R, Tsygankova; +1 Authors
K A, Kokh; V V, Atuchin; T A, Gavrilova; A, Kozhukhov; E A, Maximovskiy; L D, Pokrovsky; A R, Tsygankova; A I, Saprykin;
Defects in GaSe grown by Bridgman method
SummaryOptical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ∼0.06 nm excepting local hillock type defects. The hillock‐type formations are round‐shaped with a bottom diameter of ∼200 nm and a height of ∼20–35 nm. The drastic depletion of the hillock material by gallium has been indicated by EDX measurements.
- Novosibirsk State University Russian Federation
- Omsk State University Russian Federation
- Nikolaev Institute of Inorganic Chemistry Russian Federation
- National Research University of Electronic Technology Russian Federation
- Institute of Semiconductor Physics Russian Federation
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These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
Citations provided by BIP!popularityPopularity provided by BIP!
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
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