The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

null Dolny; null Sapp; null Elbanhaway; null Wheatley

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https://doi.org/10.1109/wct.20...

Article . 2004 . Peer-reviewed

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https://dx.doi.org/10.1109/wct...

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The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2004Publisher:IEEEJournal:Proceedings of the 16th International Symposium on Power Semiconductor Devices &amp; IC's

Authors: null Dolny; null Sapp; null Elbanhaway; null Wheatley;

doi: 10.1109/wct.2004.239935

The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

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Abstract

This paper presents a comprehensive study of the body diode characteristics of high-channel density trench power MOSFETs using analytic modeling, 2-dimensional numerical simulation, and physical measurements. The results show that, for state-of-the-art trench MOSFETs, the body diode characteristics are strongly influenced by majority carriers in the channel due to gate-controlled third quadrant conduction. This large channel current is shown to be the result of dynamic threshold voltage lowering due to the MOSFET body effect.

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Fairchild Semiconductor (United States)
United States

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