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doi: 10.1109/vts.2007.28
handle: 2117/7733
A proposal for enhancing the diagnosis of full open defects in interconnecting lines of CMOS circuits is presented. The defective line is first classified as fully opened by means of a logic-based diagnosis tool (Faloc). The proposal is based on the division of the defective line into a number of segments. The selected group of segments is derived from the topology of the line and its surrounding circuitry. The logical information related to the neighbouring metal lines for each considered test pattern is taken into account. With the proposed diagnosis methodology, a set of likely locations for the open defect on the line is obtained. A ranking between the set of possible locations is presented based on the analysis of the quiescent current consumption of the circuit under test. Examples are presented in which the use of the diagnosis methodology is shown to discriminate between different locations of the full open defect.
Best Paper Award al millor article del congrés IEEE VLSI Test Symposium 2007
Award-winning
Metal oxide semiconductors, Complementary, Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics, Integrated circuits, Circuits integrats, Metall-òxid-semiconductors complementaris
Metal oxide semiconductors, Complementary, Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics, Integrated circuits, Circuits integrats, Metall-òxid-semiconductors complementaris
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