Igbt Parameter Extraction for the Hefner IGBT Model

Ruchira Withanage; Noel Shammas; Sarath Tennakoon; Colin Oates; Will Crookes

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https://doi.org/10.1109/upec.2...

Article . 2006 . Peer-reviewed

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https://dx.doi.org/10.1109/upe...

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Igbt Parameter Extraction for the Hefner IGBT Model

descriptionPublicationkeyboard_double_arrow_right Article 01 Sep 2006Publisher:IEEEJournal:Proceedings of the 41st International Universities Power Engineering Conference

Authors: Ruchira Withanage; Noel Shammas; Sarath Tennakoon; Colin Oates; Will Crookes;

doi: 10.1109/upec.2006.367551

Igbt Parameter Extraction for the Hefner IGBT Model

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Abstract

The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment set ups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3 kV/1200 A IGBT is explained for the Hefner model

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Staffordshire University
United Kingdom

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