In this work the intrinsic voltage gain (AV) is for the first time experimentally analyzed for a planar Line-TFETs and its performance is compared with different MOSFET and point TFET architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. The Line-TFET shows a much better intrinsic voltage gain than all studied MOSFET devices (FinFET and GAA). However, when it is compared to other TFET structures, Line-TFETs show a worse AV. Besides the AV, a higher on-state current was obtained for Line-TFETs, which leads to a good compromise for analog application.