
A planar InGaAsP/InGaAs/InGaAsP p-i-n photodiode has been fabricated and used for frequency conversion of two optical signals. Nonlinear properties of the photodiode have been investigated. It is shown that photodiode responsivity R(V) dependence on bias voltage can be characterized by a parameter of the nonlinearity A, which is equal to R(V)middotR'(V) and the maximal conversion efficiency is achieved at the bias voltage where the parameter A has the maximal value
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 9 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Average | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Top 10% | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |
