Backdating in GaAs MESFET's

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 1982Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Microwave Theory and Techniques, volume 30, pages 963-968 (issn: 0018-9480, eissn: 1557-9670,

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Authors: C. Kocot; C.A. Stolte;

doi: 10.1109/tmtt.1982.1131184 , 10.1109/t-ed.1982.20834

Backdating in GaAs MESFET's

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Abstract

The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron trapping on the Cr2+and EL(2) levels at the semi-insulating substrate-channel region interface. A model describing backgating, based on DLTS and spectral measurements, is presented. Calculations based on this model predict that closely compensated substrate material will minimize backgating. Preliminary experimental data support this prediction.

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