Millimeter-Wave Semiconductor Devices

descriptionPublicationkeyboard_double_arrow_right Article 01 Nov 1976Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Microwave Theory and Techniques, volume 24, pages 685-693 (issn: 0018-9480, eissn: 1557-9670,

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Authors: N.B. Kramer;

doi: 10.1109/tmtt.1976.1128945

Millimeter-Wave Semiconductor Devices

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Abstract

Special techniques used in the construction of various types of millimeter-wave diodes are presented. The performance of millimeter Gunn and IMPATT devices is reviewed and other factors influencing the application of these diodes are discussed. The performance and characteristics of small-area diodes used for millimeter-wave modulation, mixing, and detection are also reviewed. Several shortcomings in the present design and application of millimeter diodes are pointed out with suggestions for further work.

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