A Back-Illuminated Voltage-Domain Global Shutter Pixel With Dual In-Pixel Storage
Copyright policy )A Back-Illuminated Voltage-Domain Global Shutter Pixel With Dual In-Pixel Storage
A 3.75- $\mu \text{m}$ back-illuminated voltage-domain global shutter (GS) pixel is presented. The 10T pixel architecture presented contains two independently operable storage branches and supports dual-capture, high-dynamic-range (HDR) imaging and correlated double sampling functionality. Electronic shielding of the sample diffusions by the vertical photodiode is utilized to reach native and differential parasitic light sensitivities below −73.5 and −82.5 dB at 940 nm, respectively. A GS HDR image capture mode with minimal motion artifacts is also demonstrated.
- STMicroelectronics (Switzerland) Switzerland
- University of Edinburgh United Kingdom
dynamic range, active pixel sensors, capacitance, image sensors, differential parasitic light sensitivities, Capacitors, Dual in-pixel storage, CMOS image sensors, 10T pixel architecture, image capture, photodiodes, high-dynamic-range imaging, GS HDR image capture model, back-illuminated voltage-domain global shutter pixel
dynamic range, active pixel sensors, capacitance, image sensors, differential parasitic light sensitivities, Capacitors, Dual in-pixel storage, CMOS image sensors, 10T pixel architecture, image capture, photodiodes, high-dynamic-range imaging, GS HDR image capture model, back-illuminated voltage-domain global shutter pixel
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