In this paper, a proof of concept 4 x 4 active-matrix imager fabricated at near room temperature (< 95 degC) is presented. Conventional photolithography and inkjet printing were used to pattern integrated organic FETs and photoconductors. The design and characterization of a pixel circuit is described. A simple first-order calibration technique is used to partially compensate for fixed pattern noise. Following the calibration, the imager is shown to correctly image a "T" pattern.