Modelling Power Schottky Diodes

Janusz Zarebski; Jacek Dabrowski

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https://doi.org/10.1109/tcset....

Article . 2006 . Peer-reviewed

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https://dx.doi.org/10.1109/tcs...

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Modelling Power Schottky Diodes

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 2006Publisher:IEEEJournal:2006 International Conference - Modern Problems of Radio Engineering, Telecommunications, and Computer Science

Authors: Janusz Zarebski; Jacek Dabrowski;

doi: 10.1109/tcset.2006.4404454

Modelling Power Schottky Diodes

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Abstract

This paper is concerned with modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal macromode) of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.

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Gdynia Maritime University
Poland

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