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IEEE Transactions on Electron Devices
Article . 1974 . Peer-reviewed
License: IEEE Copyright
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IEEE Transactions on Electron Devices
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Comments on "Peripheral and diffused layer effects on doping profiles"

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1974Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Electron Devices, volume 21, pages 125-126 (issn: 0018-9383, eissn: 1557-9646, Copyright policy )
Authors: T.N. Basavaraj; A.B. Bhattacharyya;

doi: 10.1109/t-ed.1974.17874

Comments on "Peripheral and diffused layer effects on doping profiles"

Abstract

A simple method is described for the characterization of uniformly doped epitaxial layers from the capacitance-voltage measurements of a diffused p-n junction, considering the peripheral effect due to the sidewall junction and the diffused layer effect due to the depletion region in the heavily doped side of the junction.

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citations
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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