TID-induced changes in 32 nm PD SOI devices depend on the device variant: low V T devices show minor increased in leakage, high V T devices show negligible change. Simulated sensitivity of TID to the gate work function of the high-k metal gate and associated doping changes confirm that the body doping remains high and generally mitigates TID sensitivity. Preliminary ring oscillator measurements show no measurable change in supply current or frequency with TID. Specially designed experimental 45 nm SOI FDSOI devices exhibit a pronounced TID-induced V T shift due to the coupling with the BOX layer.