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Modeling statistical distribution of random telegraph noise magnitude

descriptionPublicationkeyboard_double_arrow_right Article 01 Sep 2011Publisher:IEEEJournal:2011 International Conference on Simulation of Semiconductor Processes and Devices
Authors: Ken'ichiro Sonoda; Motoaki Tanizawa; Kiyoshi Ishikawa; Yasuo Inoue;

doi: 10.1109/sispad.2011.6035039

Modeling statistical distribution of random telegraph noise magnitude

Abstract

Random telegraph noise (RTN) magnitude of MOSFETs is analyzed using three-dimensional device simulation taking random discrete dopant into account. The maximum RTN magnitude is inversely proportional to the RTN region area in which the surface potential is in the vicinity of its saddle point. The inverse of the maximum RTN magnitude exhibits a normal distribution.

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Powered by OpenAIRE graph
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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
3
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