Carrier Recombination in High-K Dielectrics and its Impact on Transient Charge Effects in High-k Devices

C. Kang; R. Choi; S. Song; C. Young; G. Bersuker; B. Lee; J. Lee

Found an issue? Give us feedback

https://doi.org/10.1...arrow_drop_down

https://doi.org/10.1109/relphy...

Article . 2006 . Peer-reviewed

Data sources: Crossref

https://dx.doi.org/10.1109/rel...

Article

Data sources: Microsoft Academic Graph

Carrier Recombination in High-K Dielectrics and its Impact on Transient Charge Effects in High-k Devices

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2006Publisher:IEEEJournal:2006 IEEE International Reliability Physics Symposium Proceedings

Authors: C. Kang; R. Choi; S. Song; C. Young; G. Bersuker; B. Lee; J. Lee;

doi: 10.1109/relphy.2006.251310

Carrier Recombination in High-K Dielectrics and its Impact on Transient Charge Effects in High-k Devices

- Summary
- Metrics

Abstract

In this paper, transient charge trapping and detrapping characteristics in high-k CMOSFET have been studied systematically. Detrapping characteristics for nMOSFET and pMOSFET are due to hole trapping and electron trapping, respectively. Transient charge recombination within high-k layer was found to be the main reason for the input signal dependence in high-k CMOSFET

Related Organizations

Centre for Law, Technology and Society
Canada
SEMATECH
United States
IBM (United States)
United States
The University of Texas at Austin
United States

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	0
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average