High current characteristics of copper interconnect under transmission-line pulse (TLP) stress and ESD zapping

descriptionPublicationkeyboard_double_arrow_right Article 13 Aug 2004Publisher:IEEEJournal:2004 IEEE International Reliability Physics Symposium. Proceedings

Authors: J.H. Lee; J.R. Shih; K.F. Yu; Y.H. Wu; J.Y. Wu; J.L. Yang; C.S. Hou; +1 Authors

doi: 10.1109/relphy.2004.1315412

High current characteristics of copper interconnect under transmission-line pulse (TLP) stress and ESD zapping

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Abstract

The Cu metal interconnect under TLP stress can not be treated as the constant current stress. The increase in the metal interconnect length at GGNMOS drain can improve device's MM failure threshold but degrade device's HBM failure threshold and IT2.

Related Organizations

Chung Hua University
Taiwan
Taiwan Semiconductor Manufacturing Company (Taiwan)
Taiwan

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