The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2002Publisher:IEEEJournal:2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)

Authors: R.C. Lacoe;

doi: 10.1109/relphy.2002.996663

The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects

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Abstract

Summary form only given. The effects of total ionizing dose irradiation such as gamma- and X-rays as well as energetic electrons and protons on CMOS performance, at the single device level and at the circuit level, are described. Data are presented on the intrinsic total dose hardness of various CMOS processes, which indicates an increase in total dose hardness as CMOS technology is scaled. Design techniques and their efficacy in mitigating against total dose effects are also described.

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