Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays
Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays
We investigate Total Ionizing Dose effects on 4Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the WordLine selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations. © 2007 IEEE.
- National Research Council Italy
- Institute of Organic Synthesis and Photoreactivity Italy
- STMicroelectronics (Switzerland) Switzerland
- University of Padua Italy
Chalcogenide, NonVolatile memories, Phase change memory, Radiation effects, Phase Change memory; Non volatile memory; Radiation effects, GST, Total ionizing dose
Chalcogenide, NonVolatile memories, Phase change memory, Radiation effects, Phase Change memory; Non volatile memory; Radiation effects, GST, Total ionizing dose
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