Via charging currents during via over-etch have been measured for the first time using CHARM@-2 wafers and a special-purpose CHARM@-2-compatible photoresist mask with varying via density. The measurements confirm previous findings which showed increased charging potentials and current densities in the presence of patterned resist [l]. The measurements also show the presence of an additional effect - an increase in via charging currents with decreasing via density. This effect may have considerable implications for product damage, and for the evaluation and analysis of resist aspect-ratio dependent charging damage.