An investigation in the impact of Oxide-based Resistive Memory RAM devices (OxRRAM) variability on the memory array performances is proposed. Variability in advanced IC designs has emerged as a roadblock and significant efforts of process and design engineers are required to decrease its impact. This is especially true for OxRRAM memory, combining high level of integration with exotic materials. In this study, electrical simulations, based on an OxRRAM compact model, are performed at a circuit level. Simulation results are analyzed in terms of OxRRAM cells electrical characteristic variations to evaluate the robustness of the memory array.