Thallium bromide (TlBr) is a wide bandgap, compound semiconductor with high gamma-ray stopping power and promising physical properties. The electro-migration of Br-ions towards anode and their reaction with the contact have been long known to adversely influence the lifetime of TlBr devices. We report on the performance of TlBr devices with Tl contacts which minimizes the effects of polarization. Results indicate that vapordeposited Tl-contacts are highly ohmic, and adhere strongly to TlBr. Long term lifetime tests were performed under alternating bias with a 17.4 $\mu {\mathrm {Hz}}$ duty cycle. Unlike devices with Pt and Au contacts, devices with Tl do not exhibit the short term (of the order of 100s of hours) fluctuations. Furthermore, these devices show a stable behavior.