$\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

Venkatakrishnan Sriraman; Xiang Li; Navab Singh; Sungjoo Lee

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IEEE Electron Device Letters

Article . 2012 . Peer-reviewed

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https://dx.doi.org/10.1109/led...

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$\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 2012Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Electron Device Letters, volume 33, pages 1,060-1,062 (issn: 0741-3106, eissn: 1558-0563,

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Authors: Venkatakrishnan Sriraman; Xiang Li; Navab Singh; Sungjoo Lee;

doi: 10.1109/led.2012.2195709

$\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

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Abstract

In this letter, HfO2-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (Ireset). Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with HfO2 dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low Ireset of about 100 μA are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.

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Institute of Microelectronics
Singapore
Sungkyul University
Korea (Republic of)
Sungkyunkwan University
Korea (Republic of)
National University of Singapore
Singapore
Agency for Science, Technology and Research
Singapore

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