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This letter presents a novel readout architecture and its associated readout sequence for complementary metal-oxide-semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel source-follower transistor random telegraph signal noise. Measurement results done on a test image sensor designed with 0.35-μm CIS technology demonstrate an efficient reduction of noisy pixel numbers without a pixel performance decrease.
Noisy pixel reduction, Traitement du signal et de l'image, Random telegraph signal (RTS) noise, CMOS image sensor (CIS)- Correlated double sampling (CDS), Low frequency noise (LFN)
Noisy pixel reduction, Traitement du signal et de l'image, Random telegraph signal (RTS) noise, CMOS image sensor (CIS)- Correlated double sampling (CDS), Low frequency noise (LFN)
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