An Indium-Free Transparent Resistive Switching Random Access Memory
Copyright policy )An Indium-Free Transparent Resistive Switching Random Access Memory
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3 -GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
- Tianjin University China (People's Republic of)
- Nanyang Technological University Singapore
- Tianjin University China (People's Republic of)
- National University of Singapore Singapore
- National University of Singapore Libraries Singapore
Visible region, transparent resistive switching, Metallorganic chemical vapor deposition, Switching systems, Gallium, Indium, Retention time, Indium Free, Metalorganic chemical vapor deposition, Transparent resistive switching, Zinc oxide, Zno, Resistive switching, Memory device, Room temperature, Resistive switching behaviors, Random access memories, 620, 004, Cycling characteristics, indium free, Switching, GZO, Gzo, ZnO, Resistive switching mechanisms, Random access storage, Transparent Resistive Switching, Indium free
Visible region, transparent resistive switching, Metallorganic chemical vapor deposition, Switching systems, Gallium, Indium, Retention time, Indium Free, Metalorganic chemical vapor deposition, Transparent resistive switching, Zinc oxide, Zno, Resistive switching, Memory device, Room temperature, Resistive switching behaviors, Random access memories, 620, 004, Cycling characteristics, indium free, Switching, GZO, Gzo, ZnO, Resistive switching mechanisms, Random access storage, Transparent Resistive Switching, Indium free
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