In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, we review the limitations of current compact noise models which do not model such single-electron effects. We present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley–Read–Hall statistics to explain the behavior. Finally, we treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied.