Through-Silicon Via (TSV)

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Jan 2009Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:Proceedings of the IEEE, volume 97, pages 43-48 (issn: 0018-9219,

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Authors: Makoto Motoyoshi;

doi: 10.1109/jproc.2008.2007462

Through-Silicon Via (TSV)

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Abstract

Recently, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated. Its stage has changed from the research level or limited production level to the investigation level with a view to mass production. The 3D-LSI using through-silicon via (TSV) has the simplest structure and is expected to realize a high-performance, high-functionality, and high-density LSI cube. This paper describes the current and future 3D-LSI technologies with TSV.

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Institute of Science Tokyo
Japan

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