A CMOS image sensor for high-speed imaging

descriptionPublicationkeyboard_double_arrow_right Article , Part of book or chapter of book 01 Jan 2000Publisher:IEEEJournal:2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056)

Authors: Stevanovic, Nenad; Hillebrand, Matthias; Hosticka, Bedrich; Teuner, Andreas S.;

doi: 10.1109/isscc.2000.839710

A CMOS image sensor for high-speed imaging

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Abstract

Acquisition of the images of fast-moving objects requires imagers with high photoresponsivity at short integration times, synchronous exposure, and high-speed parallel readout. Previous CMOS implementations yield frame rates around 500 frames/s at integration times ranging from 75 to 200 ps, and some use rolling shutter only. This CMOS imager achieves more than 1000 frames/s with integration time in synchronous exposure variable between 1 /spl mu/s and 150 /spl mu/s. The 256/spl times/256 pixel imager is realized in a single-poly double-metal n-well 1 /spl mu/m CMOS technology.

Related Organizations

Fraunhofer Society
Germany
Fraunhofer Institute for Microelectronic Circuits and Systems
Germany

Keywords

Materialtechnik

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