SCR-LDMOS. A novel LDMOS device with ESD robustness

S. Pendharkar; R. Teggatz; J. Devore; J. Carpenter; T. Efland; C.-Y. Tsai

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https://doi.org/10.1109/ispsd....

Article . 2002 . Peer-reviewed

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https://dx.doi.org/10.1109/isp...

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SCR-LDMOS. A novel LDMOS device with ESD robustness

descriptionPublicationkeyboard_double_arrow_right Article 07 Nov 2002Publisher:IEEEJournal:12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

Authors: S. Pendharkar; R. Teggatz; J. Devore; J. Carpenter; T. Efland; C.-Y. Tsai;

doi: 10.1109/ispsd.2000.856839

SCR-LDMOS. A novel LDMOS device with ESD robustness

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Abstract

A novel lateral power device structure with a very high degree of ESD (electrostatic discharge) robustness is presented. This device called the SCR-LDMOS is a modification of the lateral LDMOSFET with good on state and blocking characteristics.

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Texas Instruments (United States)
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